Our team is working on the Project 27 which is
about high-k gate during the end of the first semester and the first five weeks
of the second semester of year 2.
The group is consisted of three members -Danyu Li,
Zhaojun Wei and Saisai Wen. All of the members are students form EEE department
of University of Liverpool. Dr. Ivona Mitrovic, the supervisor of the project,
is going to provide support with our project.
This project is designed to study the properties of
high-k gate stack HfSiO (50%Hf), a new material may take the place of SiO2 during transistors production. There are nine compulsory and one optional tasks
are required to be accomplished.
This blog will first introduce the background of
the project briefly and then narrate how those tasks are finished. If you have
any questions about the project, please do not hesitate to ask us.
Posted
by Saisai Wen on 3rd Feb. 2014
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